internationally recognized lecturers in the field of electron devices. The topics
include electron device physics and modeling, electrostatic discharge protection
design, testing and circuit simulation, high-k gate, reliability, and fabrication for advanced technologies.
This colloquium will provide an excellent opportunity for UCF graduate and undergraduate students to learn about the state of the art in micro/nanoelectronics, to interact and exchange ideas with the speakers, and to discuss research activities. Furthermore, it provides a great networking opportunity for all the IEEE members in the Central Florida region. Refreshments
will be provided. For detailed information visit:
http://esd.eecs.ucf.edu/index.pl/Seminars
The schedule is listed below:
Thursday,
March 25th
8:30- 8:50 AM Dr. Issa
Batarseh (UCF) Director's Message
8:50
- 9:00 Dr. Juin J. Liou (UCF) Opening Speech
9:00
- 9:15 Slavica Malobabic (UCF, EDS) Welcome Note
9:15
- 10:15 Dr. Tom Sah & Dr. Binbin Jie (CTSAH Associates) Bipolar MOS Field-Effect Transistor Characteristics Operation in Unipolar Current Mode
10:15
- 11:15 Dr. Jean-Jacques Hajjar(Analog Devices) Challenges of CDM ESD Events Simulations
2:00
3:00 PM Dr. Vladislav Vashchenko (National Semiconductor) ESD for Analog IC
Design
3:00
- 4:00 Dr. Tim Maloney (Intel)Charged Device Model ESD from Factory to Testing
4:00
- 5:00 Dr. Weng Hong Teh (Intel) To 3D or Not To 3D
Friday,
March 26th
8:30 - 9:30 AM Dr. Fernando Guarin (IBM) Microelectronic Reliability Topics for Advanced CMOS and SiGe Technologies
9:30 - 10:30 Dr. Steven Voldman (Intersil) ESD Protection on System
10:30 - 11:30 Dr. Adelmo Ortiz-Conde (Simon Bolivar University) Recent Applications of the
Lambert Function in Device Modeling
11:30 - 12:30PM Dr. Hemanth Jagannathan (IBM) High-k/Metal Gate Technology or Si CMOS Applications - From Inception to Realization
We hope to see you all there!
8:50
- 9:00 Dr. Juin J. Liou (UCF) Opening Speech
9:00
- 9:15 Slavica Malobabic (UCF, EDS) Welcome Note
9:15
- 10:15 Dr. Tom Sah & Dr. Binbin Jie (CTSAH Associates) Bipolar MOS Field-Effect Transistor Characteristics Operation in Unipolar Current Mode
10:15
- 11:15 Dr. Jean-Jacques Hajjar(Analog Devices) Challenges of CDM ESD Events Simulations
2:00
3:00 PM Dr. Vladislav Vashchenko (National Semiconductor) ESD for Analog IC
Design
3:00
- 4:00 Dr. Tim Maloney (Intel)Charged Device Model ESD from Factory to Testing
4:00
- 5:00 Dr. Weng Hong Teh (Intel) To 3D or Not To 3D
Friday,
March 26th
8:30 - 9:30 AM Dr. Fernando Guarin (IBM) Microelectronic Reliability Topics for Advanced CMOS and SiGe Technologies
9:30 - 10:30 Dr. Steven Voldman (Intersil) ESD Protection on System
10:30 - 11:30 Dr. Adelmo Ortiz-Conde (Simon Bolivar University) Recent Applications of the
Lambert Function in Device Modeling
11:30 - 12:30PM Dr. Hemanth Jagannathan (IBM) High-k/Metal Gate Technology or Si CMOS Applications - From Inception to Realization
We hope to see you all there!
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