Tuesday, October 1, 2013

Seminar: "Optical Methods for 3-D Nanostructure Metrology" by Dr. Bryan M. Barnes /11.8.13/ 11:00am-12:00pm/CREOL 102

"Optical Methods for 3-D Nanostructure Metrology" by Dr. Bryan M. Barnes
Friday, November 08, 2013 11:00 AM to 12:00 PM
CREOL Room 102

Dr. Bryan M. Barnes
Physical Measurement Laboratory
National Institute of Standards and Technology

Our research at NIST applies physics fundamental to optical scattering in order to enhance deep sub-wavelength nanoscale measurements, often on the scale of 1/10th the wavelength or less. Experimental methods have been developed that are qualitatively sensitive to sub-nanometer changes in line width for example through tailoring of the illumination angle, polarization, and focus position. Quantitative dimensional measurements are being performed using parametric models of the full geometry as inputs to rigorous electromagnetic simulations. These models are used to determine a best set of parameters that yields correct simulation-to-experiment matching of the measured scattering even from features with dimensions well below the conventional Rayleigh resolution limit.
These advances are being applied to two key challenges in the semiconductor manufacturing: defect metrology and critical dimension metrology. The optical signal from a 20 nm-wide patterned defect must be identified within a 450 mm wafer while maintaining speeds required in high-volume manufacturing. Limitations to parametric fitting necessitate developing new techniques for embedding values and uncertainties from other instruments to yield the best possible result. Ensuring the extensibility of optical methods for metrology has generated for defects the development of novel illumination and collection optimization solutions and for CD metrology hybrid metrology for embedding additional values and uncertainties from different instruments to optimize these parametric fits. As these solutions are being embraced by the industry, their potential limitations are constantly being evaluated in order to develop the next set of answers to these critical challenges.
Dr. Bryan Barnes is a Physicist at the National Institute of Standards and Technology in Gaithersburg, MD. Over the last eight years, he has been an author or co-author to several papers on patterned defect inspection, hybrid metrology, critical dimension optical metrology, and overlay metrology. He is a Principal Developer of “Quantitative Hybrid Metrology,” recently recognized with a 2013 R&D 100 Award. Dr. Barnes was an NRC Post-doctoral Fellow at NIST from 2005-2007 after attaining his Ph.D. from the University of Wisconsin-Madison in 2004.
For more information:
Dr. Bahaa E. A. Saleh
Dean & Director, Professor of Optics

besaleh @ creol . ucf . edu

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