Thursday, August 23, 2012

LighTimes: US DOE Releases 2013 SBIR and STTR Funding Opportunities Which Include Solicitation for GaN Epitaxial Studies

August 23, 2012...The US Department of Energy (DOE) has sponsored another round of Small Business Innovation Research (SBIR) and Small Business Technology Transfer (STTR) funding opportunities. Among the funding opportunities is Topic 11, Wide Bandgap Semiconductors for Energy Efficiency and Renewable Energy. Accepted project proposals covering this area are awarded $150,000 for Phase 1 of the projects and $1 million for Phase II. The deadline for the short letter-of-intent submission is September 4. If a full application is invited, it is due October 16.

The subtopics of the funding opportunity include: Bulk GaN Substrates and Novel Architectures, Advances in Epitaxial Growth, and Device Redesign and Passive Components.
In the first of the subtopics, the DOE is seeking proposals for projects that are scalable, and cost effective to eventually produce 150-200 mm diameter GaN wafers (for GaN-on-GaN devices) with dislocation defect density below 104/cm2 at costs no more than 2-3X those of Si.

Courtesy LighTimes

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