Seminar: Dr. Teri Odom, Northwestern University Chicago, Illinois at 11am on Thursday, October 27, 2016 at CREOL-103

NANOSCIENCE TECHNOLOGY CENTER
CREOL, THE COLLEGE OF OPTICS & PHOTONICS
SEMINAR

Title:       Squeezing Light into Small Spaces

Teri W. Odom Ph.D.

Department of Chemistry

Department of Materials Science and Engineering

International Institute of Nanotechnology (IIN)

Northwestern University

Chicago, Illinois

Date:      Thursday, October 27, 2016

Time:      11:00 AM – 12:00 PM

Venue:   CREOL
Room 103

Light refreshments will be served

Abstract:

Metal nanostructures concentrate optical fields into highly confined, nanoscale volumes that can be exploited in a wide range of applications. However, metal nanoparticles exhibit broad localized surface plasmon resonances that increase in width as the particle size increases. One way to narrow these broad responses is to organize the nanoparticles into arrays with spacings on the order of hundreds of nanometers. This talk will describe new ways to design arrays of strongly coupled nanoparticles that can exhibit extraordinary properties including programmable and reconfigurable modes and real-time plasmon nanoscale lasing. First, we will describe a new type of nanocavity based on arrays of metal nanoparticles that support lattice plasmon modes that can be amplified and that can result in room-temperature lasing with directional beam emission. Second, we will describe a new way to achieve ultra-narrow resonances via superlattice plasmons, collective excitations that are supported by hierarchical nanoparticle arrays. Finally, we will discuss how ultra-narrow resonances can be achieved and manipulated in emerging plasmon materials.

Biography:

Teri W. Odom is Charles E. and Emma H. Morrison Professor of Chemistry, Professor of Materials Science and Engineering, and Associate Director of the International Institute of Nanotechnology (IIN) at Northwestern University. She is an expert in designing structured nanoscale materials that exhibit extraordinary size and shape-dependent optical properties. Odom has pioneered a suite of multi-scale nanofabrication tools that has resulted in flat optics that can manipulate light at the nanoscale and beat the diffraction limit, plasmon-based nanoscale lasers that exhibit tunable color, and hierarchical substrates that show controlled wetting and super-hydrophobicity. She has also invented a class of biological nanoconstructs that are facilitating unique insight into nanoparticle-cell interactions and that show superior imaging and therapeutic properties because of their gold nanostar shape. 

Odom has received numerous honors and awards, including being named a Fellow of the American Chemical Society (ACS); a Materials Research Society (MRS) Fellow;  Fellow of the Royal Society of Chemistry; the Carol Tyler Award from the International Precious Metals Institute; a Blavatnik Young Scientist Finalist; a Radcliffe Institute for Advanced Study Fellowship at Harvard University; the ACS Akron Section Award; an NIH Director's Pioneer Award from the National Institutes of Health; the MRS Outstanding Young Investigator Award; the National Fresenius Award from Phi Lambda Upsilon and the ACS; the Rohm and Haas New Faculty Award; an Alfred P. Sloan Research Fellowship; a DuPont Young Investigator Grant; a National Science Foundation CAREER Award; the ExxonMobil Solid State Chemistry Faculty Fellowship; and a David and Lucile Packard Fellowship in Science and Engineering. Odom was the founding Chair of the Noble Metal Nanoparticles Gordon Research Conference, whose inaugural meeting was in 2010. In addition, Odom was an Associate Editor for RSC’s flagship journal Chemical Science (2009-2013) and is on the Editorial Advisory Boards of ACS Nano, Chemical Physics Letters, Materials Horizons, Annual Reviews of Physical Chemistry, and Nano Letters. She serves as founding Executive Editor of the journal ACS Photonics (2013 - ).

Contact:

Debashis Chanda, Ph.D.

Assistant Professor

NanoScience Technology Center

CREOL, College of Optics and Photonics

Physics Colloquium - Friday, October 21st

This week’s Physics department colloquium is Friday, October 21^st, 4:00-5:00pm in PSB 160/161.

Dr. Qiang Li from the Brookhaven National Laboratory will be speaking. The abstract is below.

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Title: Chiral Magnetic Effect in Condensed Matters

Abstract: The chiral magnetic effect is the generation of electrical current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum chiral anomaly in systems possessing charged chiral fermions. In quark-gluon plasma containing nearly massless quarks, the chirality imbalance is sourced by the topological transitions. In condensed matter systems, the chiral quasiparticles emerge in the Dirac and Weyl semimetals having a linear dispersion relation. Recently, the chiral magnetic effect was discovered first in a 3D Dirac semimetal ZrTe5, in which we observed a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect [Li et al arXiv:1412.6543, Nature Physics (2016) doi:10.1038/nphys3648)]. It is now observed in more than half a dozen Dirac and Weyl semimetals. 3D Dirac/Weyl semimetals have opened a fascinating possibility to study the quantum dynamics of relativistic field theory in condensed matter experiments, with potential for important practical applications.

Regards,

Cathryn Anderson

Office Assistant
Physics Department

University of Central Florida

Seminar: "You and PRL" By Samindranath Mitra, 10.25.16/12:00PM-1:00PM/CREOL RM 103

Seminar: "You and PRL" By Samindranath Mitra

Tuesday, October 25, 2016 12:00 PM to 1:00 PM
CREOL Room 103

Samindranath Mitra
Editor, Physical Review Letters

Abstract:

As the focus of science journals changes from dissemination of research to validation of it, why should you continue to submit your best work to Physical Review Letters? What "added value" does and should the journal provide? How do its editors determine which of the approximately 10,000 papers that it receives each year to publish? I plan to address -- with plenty of interspersed Q & A and free-flowing discussion -- these and related issues.

Biography:

Samindranath (Sami) grew up in Kolkata and Delhi, and received his Ph.D. at Indiana University (Bloomington) in 1994 on theoretical aspects of the quantum Hall effect. After working on chemical physics at the Albert Einstein College of Medicine in New York City, he joined Physical Review Letters. In addition to overseeing much of condensed matter physics submissions for the journal, he handles papers on transport properties in semiconductors, 2D materials, and mesoscopic systems.

For additional information:

Dr. Aristide Dogariu

Seminar: "Van der Waals Heterojunctions for Nanophotonics and Energy-efficient Electronics" by Dr. Tania Roy, 10.20.16/12:00PM-1:00PM/CREOL RM 103

Seminar: "Van der Waals Heterojunctions for Nanophotonics and Energy-efficient Electronics" by Dr. Tania Roy

Thursday, October 20, 2016 12:00 PM to 1:00 PM
CREOL Room 103

Tania Roy, Ph.D. Assistant Professor
Joint Appointment with NanoScience Technology Center, Materials Science & Engineering, and ICAMR

Abstract:

Two-dimensional materials show immense potential as successor to silicon for next generation electronics. The family of 2D materials allows a wide range of bandgaps to select from. The ability to stack these 2D materials without any lattice mismatch allows easy construction of vertical van der Waals (vdW) heterostructures. A naturally passivated surface without dangling bonds helps in integration with photonic structures such as waveguides and cavities. Despite being atomically thin, many 2D materials interact strongly with light. Amazingly enough, defects in these monolayers can be chemically passivated to enhance luminescence efficiency close to 100%. From gapless graphene to direct band-gap monolayer semiconducting transition metal dichalcogenides (TMDCs), these 2D materials allow for the realization of various nanophotonic devices and the exploration of fundamental optical sciences, covering a wide spectral range from the microwave to the ultraviolet.

In this talk, a vdW heterojunction-based all-two-dimensional transistor will be discussed. The all-2D transistor shows no surface roughness scattering, a property hitherto unforeseen in its three dimensional counterparts. A dual-gated MoS₂/WSe₂ vdW heterojunction diode can be tuned to operate in various diode operation regimes. The same device operates as a forward rectifying diode as well as a tunnel diode, merely by application of gate voltage. The first observation of gate controlled band to band tunneling in semiconducting 2D heterostructures was made here, enhancing the prospects of using vdW heterojunctions for low power electronic applications. The tunability of band alignment opens up prospects of using this system for a gate-tunable light emitting diode. A 2D/2D tunnel field effect transistor with WSe₂ and SnSe₂ will be discussed. VdW heterojunctions with graphene/h-BN/graphene show negative differential resistance, which can be used in analog applications, such as in oscillators and amplifiers. Also, a graphene/insulator/graphene heterostructure demonstrates resistive switching and can be used to make ultra-low power resistive memories. Thus, vdW heterojunctions display a new paradigm of materials innovation to sustain the aggressive improvement of electronics and optoelectronics for the continued betterment of human lives.

Biography:

Tania Roy is an Assistant Professor at the NanoScience Technology Center at UCF since July 2016. She received B.E. (Hons.) in Electrical and Electronics Engineering from B.I.T.S. Pilani, India in 2006. She obtained her Ph.D degree in Electrical Engineering from Vanderbilt University, TN in December 2011, where she worked on the reliability of GaN/AlGaN high electron mobility transistors for high power and high frequency electronics. Following that, she worked as a postdoctoral fellow at Georgia Institute of Technology on graphene-based devices for low power applications till 2013. She joined University of California, Berkeley as a postdoc in 2014 where she worked on two-dimensional materials for future generation electronics. She made the world’s first all-two-dimensional transistor, and reported the first gate controlled Esaki diode with van der Waals heterojunctions. Her research interests include using novel functional materials for energy-efficient electronics and optoelectronics.

For more information: 

Mercedeh Khajavikhan

Seminar: "Highly nonlinear crystals for efficient mid-IR frequency conversion" by Peter G. Schunemann, 10.24.16/11:00AM-12:00PM/CREOL 103

Seminar: "Highly nonlinear crystals for efficient mid-IR frequency conversion" by Peter G. Schunemann

Monday, October 24, 2016 11:00 AM to 12:00 PM
CREOL Room 103

Peter G. SchunemannBAE Systems, Inc.

Abstract:

Advances in growth of the birefringent crystals ZnGeP₂ and CdSiP₂, as well as all-epitaxial processing of orientation-patterned semiconductors GaAs (OP-GaAs) and GaP (OP-GaP), are extending solid-state laser output deep into the mid-infrared. These materials exhibit the highest nonlinear coefficients and broadest infrared transparency ranges among all practical nonlinear optical crystals. In this review paper we describe the attractive properties of these materials, along with the unique capabilities and novel crystal growth and processing that continue to provide record-breaking conversion efficiencies and output powers in the mid-infrared.

Biography:

Peter G. Schunemann has been a leading researcher in nonlinear optical materials for the last 30 years, authoring or co-authoring over 300 publications and 6 patents in the field. He is best known for developing the NLO chalcopyrite semiconductor ZnGeP2 (ZGP) for 2-micron-pumped mid-IR optical parametric oscillators (OPOs) for defense applications, primarily infrared countermeasures (IRCM). He was the first to grow large, crack-free, ZGP single crystals with sufficient quality for devices. He patented horizontal gradient freeze (HGF) growth in high-temperature transparent furnaces, and applied novel defect compensation and processing to achieve > 10-fold improvements in absorption loss, laser damage threshold, and 3-5-µm output power (world record–classified). He scaled his R&D process for production of ZGP crystals fielded in hundreds of IRCM laser systems mounted on military aircraft, successfully protecting against simultaneous multi-missile attacks.He has since demonstrated transparent HGF growth of exotic ternary and multinary compounds (AgGa1-xInxSe2, AgGaGeS4, AgGaTe2, HgGa2S4, CdGa2S4, CdGa2Se4, CaGa2S4, SrGa2S4, CaGa2Se4, GaSe) and applied understanding of defect chemistry to dramatically reduce optical losses in two other NLO chalcopyrites: CdGeAs2 (the highest d-coefficient of any known inorganic compound) and AgGaSe2, resulting in record conversion efficiencies for frequency doubling CO2-lasers. Mr. Schunemann rcenetly patented a new NLO chalcopyrite, CdSiP2, with the highest NLO coefficient of any crystal transparent and phase-matchable at 1064 nm and 1550 nm. In addition to birefringent materials, he successfully transitioned all-epitaxial growth of orientation-patterned gallium arsenide (OP-GaAs) – the first practical quasi-phasematched (QPM) semiconductor - from Stanford/AFRL to industry. He established dedicated MBE systems with auxiliary chambers for QPM template growth, and constructed a $3M Hydride Vapor Phase Epitaxy (HVPE) growth facility. He scaled OP-GaAs to 3” wafers with thicknesses up to 3.5 mm, reduced absorption losses by 4X, demonstrated multi-watt mid-IR output, the first cw OP-GaAs OPO, and the first cw OPO in any material pumped at a wavelength > 1.55 µm. External collaborations have achieved efficient THz output and femtosecond mid-IR frequency combs using OP-GaAs. This technology has recently been extended to orientation-patterned gallium phosphide (OP-GaP), an OP-GaAs analog that can be pumped at 1 µm or 1.55 µm with transparency out to 12 µm for next-generation LWIR devices. Numerous fs frequency converters in the 412 µm range have been demonstrated based on OP-GaP.

For more information:

Dr. Kenneth Schepler

Seminar By Dr. Kumar Patel, 10.13.16/11:00AM-12:00PM/CREOL RM 103 - Title and Abstract forthcoming

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